c top b e c back e b wbfbp-03a plastic-encapsulate transistors THA92TTD03 transistor description pnp epitaxial silicon transistor features power dissipation p cm : 0.15 w (t a =25 ) application high voltage amplifier for portable equipmen t:(i.e. m obile phone,mp3, md,cd-rom, dvd-rom, note book pc, etc.) marking:2d c 2d b e maximum ratings ( t a =25 unless otherwise noted ) symbol pa rameter value unit v cbo collector-base voltage -310 v v ceo collector-emitter voltage -305 v v ebo emitter-base voltage -5 v i c collector current -continuous - 2 00 ma t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in m ax unit collector-base breakdown voltage v (br)cbo i c =-100 a, i e =0 -310 v collector-emitter breakdown voltage v (br)ceo i c =-1ma, i b =0 -305 v emitter-base breakdown voltage v (br)ebo i e =-100 a, i c =0 -5 v collector cut-off current i cbo v cb =-200v, i e =0 -0.25 a v ce =-200v, i b =0 -0.25 a collector cut-off current i ceo v ce =-300v, i b =0 -5 a emitter cut-off current i ebo v eb = -5v, i c =0 -0.1 a h fe(1) v ce = -10v, i c = -1ma 60 h fe(2) v ce = -10v, i c =-10ma 100 200 dc current gain h fe(3) v ce = -10v, i c =-30ma 60 collector-emitter saturation voltage v ce (sat) i c =-20 ma, i b = -2ma -0.2 v base-emitter saturation voltage v be (sat) i c = -20 ma, i b = -2ma -0.9 v transition frequency f t v ce =-20v, i c = -10ma f= 30mhz 50 mhz wbfbp-03a (1.61.60.5) unit: mm 1. base 2. emitter 3. collector i c m collector current - pulsed - 5 00 ma 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,may,2012
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